- Crystal Structures & Growth Of Semiconductors.
- Foundations Of Modern Electronics.
- Energy Bands In Solids And Intrinsic & Extrinsic Semiconductors.
- Carrier Concentrations & Conductivity In Semiconductors.
- Excess Carriers And The Transport & The Recombination.
- Principles Of P-N Junctions And Equilibrium States.
- Biased P-N Junction And Steady State Conditions.
- P-N Junction Diodes And The Transient & A-C Conditions.
- S-S & M-S Junctions; Special Purpose Diodes & Solar Cells.
- Principles Of Bipolar Junction Transistors & Its Operation.
- BJT Biasing and Ebers-Moll model; Operational States.
- BJT Transient States (Switching) and the Small Signal Model.
- Junction Field Effect Transistors and the I-V Characteristics.
- Metal-Insulator-Semiconductor Transistors & p-n-p-n Based Devices.
- Principles of HEMTs and Superconductivity.
Readings
Textbook
Ben G. Streetman, Solid-State Electronic Devices, Prentice Hall, 1995 4th edition.
References
- Donald A. Neamen, Semiconductor Physics & Devices, 1997, IRWIN
- R. F. Pierret & G.W. Neudeck, Modular Series on Solid State
Devices, Vol. I - V,
- C. Kittle, Introduction to Solid State Physics (7th ed.), 1996,
- S. Wang, Fundamentals of Semiconductor theory & Device Physics,
1989,
- S. M. Sze, Physics of Semiconductor devices.
Grading (Tentative)
Homeworks and Quizes |
10%
|
Laboratory Work |
22% |
Midterm Exam |
30% |
Final Exam |
38% |
Schedule
- section 1
- Monday 10:40 - 12:30 Room # EB-162
Wednesday 09:40 - 10:30 Room # EB-162
- Labs: Friday 13:40 - 16:30 Lab.
# EA - 111
- section 2
- Tuesday 13:40 - 14:30 Room # EB-168
Friday 13:40 - 15:30 Room # EB-168
Labs: Wednesday
13:40 - 16:30 Lab. # EA - 111
Office Hours
- Monday 16:40 - 17:30, Friday 9:40 - 12:30
Monday 14:40 - 16:40 (after EE-312)
-